switche s - c hip 7 7 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC970 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz features functional diagram general description t he h m c 970 is a broadband high isolation all-shunt high ip 3 design, refective pi n s p d t mm ic chip. c overing 8 to 21 g h z, the switch features 40 db isolation and low 1.2 db isolation loss. t he h m c 970 is capable of switching 2 w of power from 8 to 21 g h z. t he h m c 970 operates from a positive (30ma) supply current and a negative (-10v) supply voltage and includes on chip bias network, thus requiring no rf chokes to apply d c bias. bias control signals for the switch consists of a reverse bias vol- tage of -10v typical for on state and a forward bias current of 30 ma for the off state. h igh i solation: 40 db low i nsertion loss: 1.2 db all-shunt refective t opology h igh linearity: +50 dbm i nput ip 3 c ompact die size: 2.21 x 1.45 x 0.1 mm electrical specifcations, t a = +25 c, with 30ma / -10v control, 50 ohm system typical applications t he h m c 970 is ideal for: ? t elecom i nfrastructure ? microwave radio & vsa t ? military radios, radar & ec m ? space systems ? t est i nstrumentation p arameter frequency min. t yp. max. units i nsertion loss rf c to rf1 8 - 12 g h z 12 - 21 g h z 1.1 1.3 1.4 1.7 db db i nsertion loss rf c to rf2 8 - 14 g h z 14 - 18 g h z 18 - 21 g h z 0.9 1.2 1.4 1.2 1.6 1.7 db db db i solation 35 40 db return loss on state 10 db db i nput p ower for 1 db c ompression 34 dbm i nput t hird order i ntercept ( t wo- t one i nput p ower= +16 dbm e ach t one, 1 m h z t one separation) 50 dbm v00.0111
switche s - c hip 7 7 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com insertion loss vs. pin, rfc to rf1 insertion loss vs. pin, rfc to rf2 isolation return loss insertion loss, rfc to rf1 isolation loss, rfc to rf2 * i solation data taken with probe on the die HMC970 v00.0111 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 6 8 10 12 14 16 18 20 22 24 +25c +85c -55c frequency (ghz) insertion loss (db) -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 20 22 24 rfc/rf1 (rf2 on) rfc/rf2 (rf1 on) rf1/rf2 (rf1 on) rf1/rf2 (rf2 on) frequency (ghz) isolation (db) -3 -2.5 -2 -1.5 -1 -0.5 0 20 22 24 26 28 30 32 34 36 12ghz 14ghz 16ghz input power (dbm) insertion loss (db) -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 6 8 10 12 14 16 18 20 22 24 +25c +85c -55c frequency (ghz) insertion loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 20 22 24 rfc rf1 rf2 frequency (ghz) return loss (db) -3 -2.5 -2 -1.5 -1 -0.5 0 20 22 24 26 28 30 32 34 36 12ghz 14ghz 16ghz input power (dbm) insertion loss (db)
switche s - c hip 7 7 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings control voltages state rf c - rf1 rf c - rf2 c n t l1 c n t l2 1 i l i sol -10v +30ma / 1.29v 2 i sol i l +30ma / 1.29v -10v rf i nput p ower +34 dbm negative c ontrol voltage -14v forward bias c urrent 100 ma storage t emperature -65 to +150 c operating t emperature -55 to +85 c e l ect ros t a tic s e ns iti v e de v ice obs e rv e h andl i ng p r ec au ti ons equivalent schematic HMC970 v00.0111 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz 30 40 50 60 70 8 10 12 14 16 18 20 rfc/rf1 rfc/rf2 frequency (ghz) ip3 (dbm) ip3 rfc to rf1 and rfc to rf2
switche s - c hip 7 7 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing no te s: 1. all d i m e ns i ons ar e i n i n che s [mm] 2. d ie thic kn e ss i s .004 3. ba c ks i d e m et al i za ti on: gold 4. ba c ks i d e m et al i s ground 5. bond p ad m et al i za ti on: gold 6. no c onn ecti on r e qu i r e d for unlab e l e d bond p ads. 7. ov e rall d ie s i z e .002 die packaging information [1] standard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC970 v00.0111 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz
switche s - c hip 7 7 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC970 v00.0111 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz p ad number function description i nterface schematic 1 rf c rf common port. t his port is d c shorted to ground through an on-chip inductor. 2 rf1 rf output port (path1) contains d c control voltage and also may be connected to the external d c bias through an rf choke. 3 rf2 rf output port (path2) contains d c control voltage and also may be connected to the external d c bias through an rf choke. 4 c n t l1 d c control input for port 1. 5 ct rl2 d c control input for port 2. pad descriptions
switche s - c hip 7 7 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics t he die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general h andling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. t ypical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based e sd protective containers, and then sealed in an e sd protective bag for shipment. once the sealed e sd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. do no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow e sd precautions to protect against e sd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t he surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t he chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. t he mounting surface should be clean and fat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (d c bias, i f1 and i f2) or ribbon bond (rf and lo ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. t hermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultra - sonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC970 v00.0111 2 watt pin mmic high isolation spdt switch, 8 - 21 ghz
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